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发明名称
具有沟槽电晶体胞元电极之电接触结构之电晶体排列
摘要
电晶体排列(1)具有沟槽电晶体胞元(3)沿着一半导体基质(6)中的沟槽(9)排列,其具有两个或更多个电极结构(10,11)排列于沟槽(9)中,以及在该半导体基质(6)之基质表面(7)上排列金属化(20,21),该沟槽被增长至该电晶体排列(1)之不活化边缘区(4),以及在该边缘区域(4)中该电极结构(10,11)与对应金属化(20,21)之间提供电性传导接触。
申请公布号
TW200304702
申请公布日期
2003.10.01
申请号
TW092102939
申请日期
2003.02.12
申请人
亿恒科技股份公司
发明人
约阿希姆 克鲁姆莱;弗兰茨 希尔勒;拉尔夫 亨宁格尔;马丁 珀尔其尔;瓦尔特 里格尔
分类号
H01L29/78
主分类号
H01L29/78
代理机构
代理人
蔡清福
主权项
地址
德国
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