| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor processing method and device capable of performing optimum etching without installing a monitoring device in an etching device. SOLUTION: The semiconductor processing method which comprises forming a thin film on the surface of a semiconductor substrate, applying resist to the formed thin film, exposing and developing the resist, and etching the thin film by using the exposed/developed resist is provided with; a process (1) for measuring the film thickness distribution of the thin film; a process (5) for calculating the etching rate uniformity of each of a plurality of etching processors for etching the semiconductor substrate on which the thin film is formed; and a process (2) for selecting the etching device having the etching rate uniformity suited to the film thickness distribution on the basis of the measured film thickness distribution and the calculated etching rate uniformity. COPYRIGHT: (C)2004,JPO
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