发明名称 |
Asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MOSFET) |
摘要 |
An asymmetric retrograde HALO Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) includes a semiconductor substrate. A gate is formed over the substrate, the gate defining a channel thereunder in the substrate having a source side and a drain side. A retrograde HALO doped area is formed in the source side of the channel using tilted ion implantation. A source and drain are formed in the substrate adjacent to the source and drain sides of the channel. The asymmetrical doping arrangement provides the specified level of off-state leakage current without decreasing saturation drive current and transconductance.
|
申请公布号 |
US6667512(B1) |
申请公布日期 |
2003.12.23 |
申请号 |
US20000539577 |
申请日期 |
2000.03.31 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUSTER CARL R.;RICCOBENE CONCETTA |
分类号 |
H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|