| 摘要 |
A chip format semiconductor device, has external connections (11, 12) comprising metal balls (12) placed on conductive adhesive or solder paste fillings (11) in via holes. <??>A chip format semiconductor device has a chip (1) with: <??>(a) a first insulation layer (3) and insulation-free contact pads (2); <??>(b) conductor lines (5) extending on the insulation layer (3) and leading from the pads (2) to foot regions of external connection elements (11, 12); <??>(c) a further insulation layer (8) located on the conductor lines (5) and the first insulation layer (3) and having a via hole with a conductive adhesive or solder paste filling (11) above each foot region; and <??>(d) one or more external metal balls (12), each placed on the conductive adhesive or solder paste (11) in the free end region of a via hole. <??>An Independent claim is also included for processes for producing the above chip format semiconductor device by: <??>(i) applying a first insulation layer (3) onto the chip surface while leaving insulation-free contact pads (2); (ii) applying conductor lines (5) which extend on the insulation layer (3) from the contact pads (2) to foot regions of external connection elements (11, 12); <??>(iii) applying a further insulation layer (8), having via holes above the foot regions, onto the conductor lines (5) and the first insulation layer (3); <??>(iv) introducing a conductive adhesive or solder paste (11) into the via holes; <??>(v) placing one or more external metal balls (12) onto the conductive adhesive or solder paste (11) in the free end regions of the via holes; and <??>(vi) curing the conductive adhesive or melting the solder paste. <??>Preferred Features: The further insulation layer (8) is much thicker than the first insulation layer (3). The metal balls may comprise metallized plastic balls (12). The process is carried out on a wafer and, after curing of the conductive adhesive or melting of the solder paste, the wafer is separated into individual devices. |
