发明名称 |
POSITIVE PHOTORESIST COMPOSITION, SUBSTRATE WITH PHOTOSENSITIVE FILM, AND METHOD FOR FORMING RESIST PATTERN |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive photoresist composition with which a pattern having a good vertical profile is formed when a resist film of ≥3.0 μm thickness on a substrate having surface level fluctuation is formed into a pattern having ≤0.8 μm width, and the pattern shows no dependence on baking treatment, and also to provide a substrate with a photosensitive film and a method for forming a resist pattern. <P>SOLUTION: The positive photoresist composition contains (A) an alkali-soluble novolac resin in which part of hydrogen atoms in the whole phenolic hydroxyl groups are substituted with 1,2-naphthoquinone dioxide sulfonyl groups. The alkali soluble novolac resin (A) shows ≤3.0 dispersion degree [weight average molecular weight (Mw)/number average molecular weight (Mn)]. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004029840(A) |
申请公布日期 |
2004.01.29 |
申请号 |
JP20030279281 |
申请日期 |
2003.07.24 |
申请人 |
TOKYO OHKA KOGYO CO LTD |
发明人 |
KATANO AKIRA;MASUDA YASUO;DOI KOSUKE;OBARA HIDEKATSU |
分类号 |
G03F7/023;C08G8/28;H01L21/027 |
主分类号 |
G03F7/023 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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