发明名称 POSITIVE PHOTORESIST COMPOSITION, SUBSTRATE WITH PHOTOSENSITIVE FILM, AND METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive photoresist composition with which a pattern having a good vertical profile is formed when a resist film of &ge;3.0 &mu;m thickness on a substrate having surface level fluctuation is formed into a pattern having &le;0.8 &mu;m width, and the pattern shows no dependence on baking treatment, and also to provide a substrate with a photosensitive film and a method for forming a resist pattern. <P>SOLUTION: The positive photoresist composition contains (A) an alkali-soluble novolac resin in which part of hydrogen atoms in the whole phenolic hydroxyl groups are substituted with 1,2-naphthoquinone dioxide sulfonyl groups. The alkali soluble novolac resin (A) shows &le;3.0 dispersion degree [weight average molecular weight (Mw)/number average molecular weight (Mn)]. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004029840(A) 申请公布日期 2004.01.29
申请号 JP20030279281 申请日期 2003.07.24
申请人 TOKYO OHKA KOGYO CO LTD 发明人 KATANO AKIRA;MASUDA YASUO;DOI KOSUKE;OBARA HIDEKATSU
分类号 G03F7/023;C08G8/28;H01L21/027 主分类号 G03F7/023
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