METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating the capacitor of a semiconductor device is provided to prevent the lower electrode of the capacitor from being transformed by leaving a mold insulation layer after the first and second lower electrodes are formed. CONSTITUTION: After the first buffer layer(14), the mold insulation layer(16), the first lower electrode(18) and the second buffer layer(20) are sequentially formed on a semiconductor substrate(10) including a buried contact(12), a concave groove is formed. The second lower electrode(22) is formed on the side surface of the mold insulation layer in the concave groove, and the buried contact is exposed. A dielectric layer and the first upper electrode(26a) are formed on the second lower electrode and the exposed buried contact. The dielectric layer and the first upper electrode are etched to expose the buried contact. The second upper electrode is formed on the resultant structure.