| 发明名称 |
Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors |
| 摘要 |
The invention relates to novel boron, phosphorus or boron-aluminium dopant pastes for the production of p, p+ and n, n+ regions in monocrystalline and polycrystalline Si wafers, and of corresponding pastes for use as masking pastes in semiconductor fabrication, power electronics or in photovoltaic applications.
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| 申请公布号 |
US6695903(B1) |
申请公布日期 |
2004.02.24 |
| 申请号 |
US20010936285 |
申请日期 |
2001.09.12 |
| 申请人 |
MERCK PATENT GMBH |
发明人 |
KUEBELBECK ARMIN;ZIELINSKI CLAUDIA;HEIDER LILIA;STOCKUM WERNER |
| 分类号 |
H01L21/225;H01L21/22;H01L31/0288;H01L31/04;H01L31/068;(IPC1-7):H01L31/048 |
主分类号 |
H01L21/225 |
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