| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make fine a MOSFET for high frequency amplification having a drain offsetting region fine and, at the same time, lower its on-resistance. <P>SOLUTION: In the MOSFET, electrode leading-out conductor plugs 13(p1) are respectively provided on a source region 10, a drain region 9, and a reach-through layer 3 (4). Two layers of first-layer wiring 11s and 11d(M1) are respectively connected to the conductor plugs 13(p1), and two layers of second-layer wiring 12s and 12d for back lining are respectively connected to the first-layer wiring 11s and 11d(M1) on the plugs 13(p1). <P>COPYRIGHT: (C)2004,JPO</p> |
