| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which further improves voltage withstanding.SOLUTION: A semiconductor device of an embodiment comprises: a first semiconductor region; second semiconductor regions selectively provided on a surface of the first semiconductor region; third semiconductor regions selectively provided on surfaces of the second semiconductor regions; a first electrode which is electrically connected to the third semiconductor region and includes a contact region which extends from a surface of the third semiconductor region to the second semiconductor region and has a bottom edge located on the underside of the third semiconductor region, and which has a width at the bottom edge narrower than a width at a position of the surface of the third semiconductor region; a fourth semiconductor region provided between the contact region, and the second semiconductor region and the third semiconductor region; a second electrode electrically connected to the first semiconductor region; and a third electrode provided on the first semiconductor region, the second semiconductor region and the third semiconductor region via an insulation film.SELECTED DRAWING: Figure 1 |
