发明名称 |
Method of manufacturing a semiconductor apparatus with a tapered aperture pattern to form a predetermined line width |
摘要 |
When a hole pattern is formed on a film to be processed, a matching deviation margin at a lithography step is reserved by making a diameter of a bottom of a hole substantially equal to a diameter of an aperture of the hole. The method for manufacturing the semiconductor apparatus includes the steps of: forming a (first) mask material film on a film to be processed; forming a tapered open pattern on the (first) mask material film; and etching the film to be processed by using the (first) mask material film as a mask.
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申请公布号 |
US6716747(B2) |
申请公布日期 |
2004.04.06 |
申请号 |
US20020154237 |
申请日期 |
2002.05.23 |
申请人 |
SONY CORP |
发明人 |
UESAWA FUMIKATSU |
分类号 |
H01L21/28;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/32 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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