| 摘要 |
The present invention provides a method to manufacture copper wiring, to form an Ru film of a good surface state on an MnO_x film as a continuous film by good film forming properties which are able to bury Cu by good burying properties. When Cu wiring to bury a concave part (203) with respect to a substrate (W) having an interlayer insulation film (202) where the concave part (203) of a predetermined pattern is formed on a surface, the method comprises: a process of forming an MnO_x film (205) by atomic layer deposition (ALD); a process of performing a hydrogen radical process on a surface of the MnO_x film (205); a process of forming an Ru film (206) on the surface of the MnO_x film by chemical vapor deposition (CVD) after the hydrogen radical process; and a process of forming a Cu-based film (207) by physical vapor deposition (PVD) to bury the Cu-based film (207) in the concave part (203). When the Ru film (206) is formed, a film formation condition and a hydrogen radical processing condition of the MnO_x film (205) are defined to promote nucleus formation and form the Ru film (206) in a state of high surface smoothness. |
