FIELD-EFFECT TRANSISTORS HAVING TRANSITION METAL DICHALCOGENIDE CHANNELS AND METHODS OF MANUFACTURE

摘要

A transistor which is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed by using a direct deposition process, and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material can be formed by using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins which are utilized the transition metal dichalcogenide material can be formed with a sidewall which is either perpendicular to a substrate or sloped to the substrate.