STRAPPING STRUCTURE OF MEMORY CIRCUIT

摘要

A memory circuit includes a first memory cell and a second memory adjacent to the first memory cell. The first memory cell includes a first word line strapping line segment electrically coupled with a pass device of the first memory cell; and a second word line strapping line segment. The second memory cell includes a first word line strapping line segment; and a second word line strapping line segment electrically coupled with a pass device of the second memory cell. The first word line strapping line segment of the first memory cell and the first word line strapping line segment of the second memory cell are connected to each other on a first interconnection layer. The second word line strapping line segment of the first memory cell and the second word line strapping line segment of the second memory cell are connected to each other on the first interconnection layer.