| 摘要 |
A MOSFET semiconductor device includes a substrate, a gate electrode, a gate oxide, first and second sidewall spacers, and nickel silicide layers. The gate oxide is disposed between the gate electrode and the substrate, and the substrate includes source/drain regions. The gate electrode has first and second opposing sidewalls, and the first and second sidewall spacers are respectively disposed adjacent the first and second sidewalls. The first and second sidewall spacers are formed from a low-K spacer material that is substantially non-reactive with nickel, for example, SiHC, hydrogen silsesquioxane and methyl silsesquioxane. The nickel silicide layers are disposed on the source/drain regions and the gate electrode. A method of manufacturing the semiconductor device is also disclosed.
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