发明名称 Semiconductor structure and manufacturing method for the same
摘要 A semiconductor structure and a manufacturing method of the same are disclosed. The semiconductor structure includes a conductive layer, a conductive strip, a dielectric layer, and a conductive element. The conductive layer has a first conductive material. The conductive strip is in the same level as the conductive layer and has a second conductive material. The second conductive material is adjoined with the first conductive material having a conductivity characteristic different from a conductivity characteristic of the second conductive material. The conductive element crisscrosses the conductive strip and separated from the conductive strip by the dielectric layer.
申请公布号 US9455155(B2) 申请公布日期 2016.09.27
申请号 US201414325415 申请日期 2014.07.08
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 Lai Erh-Kun
分类号 H01L29/792;H01L21/311;H01L27/115;H01L21/3213 主分类号 H01L29/792
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A semiconductor structure, comprising: a conductive layer having a first conductive material; a dielectric layer; and a stack of conductive levels each comprising a conductive layer and a conductive strip, wherein the conductive strip is in the same level as the conductive layer and has a second conductive material, wherein the second conductive material is adjoined with the first conductive material having a conductivity characteristic different from a conductivity characteristic of the second conductive material, a conductive element crisscrosses the conductive strip and is separated from the conductive strip by the dielectric layer.
地址 Hsinchu TW