发明名称 |
Semiconductor structure and manufacturing method for the same |
摘要 |
A semiconductor structure and a manufacturing method of the same are disclosed. The semiconductor structure includes a conductive layer, a conductive strip, a dielectric layer, and a conductive element. The conductive layer has a first conductive material. The conductive strip is in the same level as the conductive layer and has a second conductive material. The second conductive material is adjoined with the first conductive material having a conductivity characteristic different from a conductivity characteristic of the second conductive material. The conductive element crisscrosses the conductive strip and separated from the conductive strip by the dielectric layer. |
申请公布号 |
US9455155(B2) |
申请公布日期 |
2016.09.27 |
申请号 |
US201414325415 |
申请日期 |
2014.07.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Lai Erh-Kun |
分类号 |
H01L29/792;H01L21/311;H01L27/115;H01L21/3213 |
主分类号 |
H01L29/792 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. A semiconductor structure, comprising:
a conductive layer having a first conductive material; a dielectric layer; and a stack of conductive levels each comprising a conductive layer and a conductive strip, wherein the conductive strip is in the same level as the conductive layer and has a second conductive material, wherein the second conductive material is adjoined with the first conductive material having a conductivity characteristic different from a conductivity characteristic of the second conductive material, a conductive element crisscrosses the conductive strip and is separated from the conductive strip by the dielectric layer. |
地址 |
Hsinchu TW |