| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to shorten an interval of process time for removing a subsequent nitride layer by using a relatively rapid wet etch rate as compared with a pad nitride layer formed by a conventional LPCVD(low pressure chemical vapor deposition) method. CONSTITUTION: A pad oxide layer(12) and a photoresist layer pattern for defining an isolation region are sequentially formed on a semiconductor substrate(11). A predetermined thickness of the pad oxide layer and the substrate is etched to form a trench by using the photoresist layer pattern as an etch barrier. A gap-fill insulation layer having a dual structure of a nitride layer(15) and an oxide layer(16) is formed on the substrate including the trench. The gap-fill insulation layer is polished. An annealing process is performed on the polished substrate. The pad oxide layer is eliminated.
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