| 摘要 |
There are provided a redundancy circuit of a semiconductor memory device and a fail repair method, which are capable of repairing both a fail main cell and a fail redundancy cell when the redundancy cell substituted for the fail main cell is defective. The redundancy circuit includes: a repair logic unit 100 for replacing a logic unit related to a memory cell array unit; a first programming unit 110 for connecting a redundancy cell array unit 120 with the repair logic unit 100 by programming to replace a main cell having a fail bit with a redundancy cell; a second programming unit 130 for connecting a repair redundancy cell array unit 140 with the repair logic unit 100 by programming to replace a redundancy cell having a fail bit with a repair cell; a redundancy cell array unit 120 having a plurality of redundancy cells substituted for the fail cells by the programming state of the first programming unit 110; and a repair redundancy cell array unit 140 having a plurality of repair redundancy cells substituted for the fail redundancy cell by the programming state of the second programming unit 130. The first programming unit 110 includes fuses and the second programming unit 130 includes ferroelectric capacitors.
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