发明名称 SILOXANE-BASED RESIN AND METHOD FOR PREPARING INTERLAYER DIELECTRIC OF SEMICONDUCTOR BY USING THE SAME
摘要 PURPOSE: Provided is a siloxane-based resin. from which an interlayer dielectric having a low dielectric constant and excellent mechanical properties can be obtained. CONSTITUTION: The siloxane-based resin is prepared by hydrolysis and polycondensation of: a cyclic siloxane compound of formula 1 as a unit (a); a silane compound of the formula of R'SiX1X2X3 as a unit (b), in which R' is H, a C1-C3 alkyl, a C3-C10 cyclic alkyl or a C6-C15 aryl, and each of X1, X2 and X3 independently represents a C1-C10 alkoxy or halogen; and a silane compound of the formula of R'SiX1X2X3 as a unit (c), in which R' is a C1-C3 fluoro-, phenyl- or cyano-containing alkyl or aryl, and each of X1, X2 and X3 independently represents a C1-C10 alkoxy or halogen, in an organic solvent in the presence of a catalyst and water: wherein R is H, a C1-C3 alkyl, a C3-C10 cyclic alkyl or C6-C15 aryl; each of X1, X2 and X3 independently represents H, a C1-C3 alkyl, C1-C10 alkoxy or halogen with the proviso that at least one of them is a C1-C10 alkoxy or halogen; m is an integer of 1-10; and n is an integer of 3-8.
申请公布号 KR20040037968(A) 申请公布日期 2004.05.08
申请号 KR20020066819 申请日期 2002.10.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JI HUN;LEE, JIN GYU;RYU, I YEOL
分类号 C08G77/44;C08G77/50;C09D183/14;H01L21/312;H01L23/532;(IPC1-7):C08G77/44 主分类号 C08G77/44
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