发明名称 HEATING APPARATUS WITH FUNCTION OF ELECTROSTATIC ATTRACTION FOR HEATING UNIFORMLY WAFER AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A heating apparatus with a function of electrostatic attraction and a manufacturing method thereof are provided to heat uniformly a wafer by controlling the electrostatic attraction between the apparatus and the wafer using an insulating layer with non-uniform volume resistivity. CONSTITUTION: A heating apparatus(6) includes a support member(1), an electrode for electrostatic attraction, a heating layer, and an insulating layer. The electrode(3) is formed at one surface of the support member. The heating layer(4) is formed at the other surface of the support member. The insulating layer(5) covers the electrode and the heating layer. The insulating layer has volume resistivity which varies with radius.
申请公布号 KR20040038655(A) 申请公布日期 2004.05.08
申请号 KR20030070512 申请日期 2003.10.10
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 KANO SHOJI;SATOH KENJI;ITO KENJI
分类号 H05B3/20;C23C16/26;C23C16/38;H01L21/00;H01L21/02;H01L21/68;H01L21/683;H05B3/10;H05B3/26;H05B3/74;(IPC1-7):H01L21/68 主分类号 H05B3/20
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