| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stacked photovoltaic element wherein a plurality of i-type semiconductor layers are made of microcrystal silicon having a high photoelectric conversion efficiency and capable of maintaining also a high photoelectric conversion efficiency after emission of light for a long time. <P>SOLUTION: In the stacked photovoltaic element, a first i-type semiconductor layer 404 is made of hydrogenated amorphous silicon and second and succeeding i-type semiconductor layers are made of hydrogenated amorphous silicon or microcrystalline silicon, let an open end voltage when a pin photovoltaic single element is manufactured by using the i-type semiconductor layer made of the microcrystalline silicon in the second and succeeding pin elements 416, 417 be Voc, and let the film thickness of the i-type semiconductor layer be t. Then, the short-circuit photoelectric current density of the stacked photovoltaic element is rate-limited by the pin element including the i-type semiconductor layer whose Voc/t value is highest. <P>COPYRIGHT: (C)2004,JPO</p> |
