| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having the structure for enabling further increase in the external terminals, and also to provide a method of manufacturing the same semiconductor device. <P>SOLUTION: The semiconductor device comprises an underlayer 12, a first main surface 36 including a plurality of electrode pads 34 provided on the underlayer 12, a surface protection film 35 provided on the first main surface 36, a second main surface 38 opposing to the first main surface, and a semiconductor chip 30 including a plurality of side surfaces 37 between the surface of surface protection film 35 and the second main surface 36. Moreover, the semiconductor device also comprises an insulation property expanding portion 20 formed to surround the side surface 37 of the semiconductor chip 30, a plurality of wiring patterns 42 electrically connected to each electrode pad 34 and guided on the surface of the expanding portion 20 from the electrode pad 34, a sealing portion 44 formed to expose a part of the wiring pattern 42 on this pattern 42, and a plurality of external terminals 47 provided on the wiring pattern 42 in the area including the upper side of the expanding portion 20. <P>COPYRIGHT: (C)2004,JPO</p> |
