A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.
申请公布号
AU2003294408(A1)
申请公布日期
2004.06.18
申请号
AU20030294408
申请日期
2003.11.19
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
CHONGYING XU;ALEXANDER, S. BOROVIK;THOMAS, H. BAUM