METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to form a capacitor with sufficient capacitance for a stable operation of a device in response to high integration of a semiconductor device by using a single composite layer of Ta2O5(X)Y2O3(1-X) as a dielectric layer. CONSTITUTION: An interlayer dielectric(3) is formed on a semiconductor substrate(1) with bitlines(2). A contact plug(6) in contact with the substrate is formed in the interlayer dielectric. A storage node(10) is formed on the interlayer dielectric to contact the contact plug. A dielectric layer(11) made of a single composite layer of Ta2O5(X)Y2O3(1-X) is formed on the storage node by an ALD(atomic layer deposition) method. A diffusion preventing layer(12) is deposited on the dielectric layer. A plate electrode(13) is formed on the diffusion preventing layer.