| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress the formation of amorphous silicon in an early stage of the formation of an i-type microcrystalline silicon layer of a microcrystalline silicon solar cell having a pin structure. <P>SOLUTION: There are provided a substrate 1, a first conductivity type first silicon layer 3 formed on an upper surface side of the substrate 1, a silicon oxide layer 4 formed on the first silicon layer 3, an intrinsic microcrystalline second silicon layer 5 formed on the silicon oxide layer 4, and a third silicon layer 6 of an opposite conductivity type to the first conductivity type formed on the second silicon layer 5. The silicon oxide layer 4 effectively prevents the amorphous silicon from being formed in an early stage of the formation of the second silicon layer 5 of a microcrystalline silicon film. Removal of the amorphous silicon from the second silicon layer 5 improves the conversion efficiency of the thin film solar cell. <P>COPYRIGHT: (C)2004,JPO</p> |
