发明名称 |
METHOD FOR MANUFACTURING A SILICON WAFER |
摘要 |
Provided is a method for manufacturing a silicon wafer including a first step of heat-treating a raw silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method in an oxidizing gas atmosphere at a maximum target temperature of 1300 to 1380° C., a second step of removing an oxide film on a surface of the heated-treated silicon wafer obtained in the first step, and a third step of heat-treating the stripped silicon wafer obtained in the second step in a non-oxidizing gas atmosphere at a maximum target temperature of 1200 to 1380° C. and at a heating rate of 1° C./sec to 150° C./sec in order that the silicon wafer may have a maximum oxygen concentration of 1.3×1018 atoms/cm3 or below in a region from the surface up to 7 μm in depth. |
申请公布号 |
US2016293446(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
US201615082358 |
申请日期 |
2016.03.28 |
申请人 |
GlobalWafers Japan Co., Ltd. |
发明人 |
SUDO Haruo;ARAKI Koji;AOKI Tatsuhiko;MAEDA Susumu |
分类号 |
H01L21/324;H01L21/311;H01L21/02 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a silicon wafer including a first step of heat-treating a raw silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method in an oxidizing gas atmosphere at a maximum target temperature of 1300 to 1380° C., a second step of removing an oxide film on a surface of the heated-treated silicon wafer obtained in the first step, and a third step of heat-treating the stripped silicon wafer obtained in the second step in a non-oxidizing gas atmosphere at a maximum target temperature of 1200 to 1380° C. and at a heating rate of 1° C./sec to 150° C./sec in order that the silicon wafer may have a maximum oxygen concentration of 1.3×1018 atoms/cm3 or below in a region from the surface up to 7 μm in depth. |
地址 |
Kitakanbara-gun JP |