| 摘要 |
A semiconductor device includes an n-type semiconductor substrate including a source region and a drain region in a main surface thereof, a high-permittivity insulator film including a high permittivity material and formed to cover an upper side of a region of the main surface of n-type semiconductor substrate, which region is interposed between source region and drain region. And the semiconductor device includes a boron-doped gate electrode formed above high-permittivity insulator film, and a high-permittivity nitride layer formed between high-permittivity insulator film and boron-doped gate electrode.
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