| 摘要 |
In one embodiment, the threshold voltage of a first transistor is adjusted by implanting a dopant through a mask (e.g., photoresist material). The thickness of the mask may be varied to obtain a particular threshold voltage. The mask may be formed such that it covers a first transistor region where the first transistor is to be fabricated, while leaving a second transistor region exposed. This allows an implant step to adjust the threshold voltage of the first transistor and to form a well in the second transistor region.
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