| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a purification method wherein a gas containing noxious compounds such as trimethylgallium discharged from a manufacturing process of gallium nitride compound semiconductors is purified efficiently and with improved purification capacity, without reducing efficiency of removing a noxious component, and without generating anew another noxious component such as a nitogen oxide, even though the treatment objective noxious gas is dry and contains ammonia. <P>SOLUTION: The gas containing the noxious component is brought into contact with a purifier comprised of addition of an alkali metal compound to a metal oxide having copper (II) oxide and manganese (IV) oxide as principal components. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
