| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize a semiconductor device which has a high reliability and an excellent heat resistance. <P>SOLUTION: In a semiconductor power module, a ceramic circuit board 2 includes a ceramic substrate 3 of silicon nitride, a first metallic plate 4 of Cu, and a second metallic plate 5 of Cu. The first metallic plate 4 and a Cu metallic pattern 4a are formed on a first main surface of the ceramic substrate 3, and the second Cu metallic plate 5 is formed on a second main surface of the ceramic substrate 3. The second metallic plate 5 is joined to a heat sink 1 made of Cu and having a thickness of 3.5 mm via a joint layer 6. A semiconductor element 8 of IGBT is joined to a first metallic plate 4 via a solder 7. The element 8 is connected to the metallic pattern 4a via a bonding wire 9. The ceramic substrate 3 has a thickness of 0.2-0.6 mm, an antibending strength of 450-1,500 MPa, and a thermal conductivity of 60-320 W/mK. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
