| 摘要 |
A semiconductor optical component is disclosed which comprises a current injection region and at least one electrically isolated region referred to as a first plateau, each region containing a contact layer of an alloy based on gallium arsenide, GaAs, deposited on a semiconductor material upper confinement layer. The component further comprises in the first plateau a dielectric material isolation layer on top of the contact layer. An attachment layer is disposed between the contact layer and the isolation layer to increase the adhesion of the isolation layer to the contact layer. A method of fabricating the above kind of component is also disclosed.
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