| 摘要 |
PURPOSE: A pattern correction method of a semiconductor device is provided to improve accuracy of OPC(Optical Proximity Correction) and to shorten the correction time by comparing a reference die and comparison dies. CONSTITUTION: A photoresist pattern is formed on a reference die(12) in a single wafer(10). A stepper pattern is formed on the first, second and third comparison die(14,16,18). The photoresist pattern of the reference die and the stepper pattern of the comparison dies are compared by using a defect inspection apparatus. A photomask is then fabricated by correcting the correction pattern using the comparison data.
|
