METHOD FOR MANUFACTURING BIPOLAR TRANSISTOR USING CMOS PROCESS TO IMPROVE GAIN AND CONTROLLABILITY

摘要

PURPOSE: A method for manufacturing a bipolar transistor is provided to improve gain and controllability by using conventional CMOS logic processes. CONSTITUTION: High-voltage deep well and drive-in processes are performed in a semiconductor substrate. LOCOS(LOCal Oxidation of Silicon) processing is carried out. An N-base and P-base process are performed in the substrate. A logic N-well and P-well are formed, and the logic wells are annealed. A poly gate is formed. An LDD(Lightly Doped Drain) and a source/drain of NMOS and PMOS are sequentially formed in the substrate. The resultant structure is annealed after heavily doped source and drain are formed. CONT-PAD processes are sequentially performed.