| 发明名称 |
Cost effective polymide process to solve passivation extrusion or damage and SOG delaminates |
| 摘要 |
The present invention teaches the deposition of a pattern of interconnecting lines and bond pads. Passivation layers are deposited over this metal pattern. A layer of photosensitive polyimide is deposited over the passivation layers. This layer of photosensitive polyimide is patterned, exposed and developed to expose the underlying bonding pads. The remaining polyimide is cured and cross-linked and remains in place to serve as a buffer during further device packaging. Key to the present invention is that the remaining photosensitive polyimide is not removed after the bond pad has been exposed.
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| 申请公布号 |
US6803327(B1) |
申请公布日期 |
2004.10.12 |
| 申请号 |
US19990285986 |
申请日期 |
1999.04.05 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHEU SHIH-SHIUNG;SHEU YEA-DEAN;SHEN CHIH-HENG |
| 分类号 |
H01L21/311;H01L21/312;H01L21/60;H01L21/768;H01L23/31;(IPC1-7):H01L21/476;H01L21/44;H01L21/31;H01L21/469 |
主分类号 |
H01L21/311 |
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