发明名称 Semiconductor optical device e.g. semiconductor optical amplifier, manufacturing method, involves forming semiconductor layer comprising uniform thickness in one zone and varying thickness in another zone, above protection layer
摘要 <p>The method involves uniformly growing an active layer (4) above a lower cladding layer (3), and forming a semiconductor layer above a protection layer (5) that is grown above the active layer. The semiconductor layer has a thickness progressively varying according to longitudinal axis in a zone and a uniform thickness in another zone, where the active layer has a uniform thickness.</p>
申请公布号 FR2854469(A1) 申请公布日期 2004.11.05
申请号 FR20030003993 申请日期 2003.04.01
申请人 ALCATEL 发明人 GOLDSTEIN LEON;CROTTINI ANDREA
分类号 G02B6/122;G02B6/136;H01S5/10;H01S5/20;H01S5/22;H01S5/50;(IPC1-7):G02B6/12;G02B6/30 主分类号 G02B6/122
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