发明名称 |
Semiconductor optical device e.g. semiconductor optical amplifier, manufacturing method, involves forming semiconductor layer comprising uniform thickness in one zone and varying thickness in another zone, above protection layer |
摘要 |
<p>The method involves uniformly growing an active layer (4) above a lower cladding layer (3), and forming a semiconductor layer above a protection layer (5) that is grown above the active layer. The semiconductor layer has a thickness progressively varying according to longitudinal axis in a zone and a uniform thickness in another zone, where the active layer has a uniform thickness.</p> |
申请公布号 |
FR2854469(A1) |
申请公布日期 |
2004.11.05 |
申请号 |
FR20030003993 |
申请日期 |
2003.04.01 |
申请人 |
ALCATEL |
发明人 |
GOLDSTEIN LEON;CROTTINI ANDREA |
分类号 |
G02B6/122;G02B6/136;H01S5/10;H01S5/20;H01S5/22;H01S5/50;(IPC1-7):G02B6/12;G02B6/30 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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