| 摘要 |
The present invention discloses a light emitting diode (LED) by using a P-type ZnTe layer or a ZnSe layer as a substrate. To match the lattice between the substrate and blue light LED of cubic crystal, a BP(boron phosphide) buffer layer of single crystal is formed on the substrate. When the blue light LED emits blue light of wavelength from 450 nm to 470 nm, the ZnTe or ZnSe substrate absorbs the blue light and emits yellow-green light of wavelength 550 nm. Thus, white light is produced by mixing the blue light and the yellow-green light.
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