CHEMICALLY AMPLIFIED POSITIVE TYPE PHOTORESIST MATERIAL AND PATTERNING METHOD USING THE SAME TO IMPROVE SENSITIVITY, RESOLUTION, LIGHT EXPOSURE LATITUDE, PROCESS ADAPTABILITY AND SHAPE OF PATTERNS AFTER LIGHT EXPOSURE

摘要

PURPOSE: A chemically amplified positive type photoresist material and a patterning method using the same are provided to improve sensitivity, resolution, light exposure latitude, process adaptability, the shape of patterns after light exposure, in particular, to reduce line edge roughness and to improve etching resistance. CONSTITUTION: The chemically amplified positive type photoresist material comprises a polymer compound comprising at least one selected from monomer units of A, B and C represented by formula 1, wherein the polymer compound has 100deg.C or more of a glass transition temperature. In the formula 1, R1 is a hydrogen atom, an alkyl or an acyl group; each of R2 and R3 is independently a hydrogen atom, a fluorine atom, an alkyl group having the number of carbon atoms of 1-4, or an alkyl group having the number of carbon atoms of 1-4 comprising one or more of fluorine atoms; R5 is a halogen, an alkyl group, an oxoalkyl group, an acyl group, an acyloxy group or an alkoxycarbonyl group; R7 is an acid-labile group; each of R4, R6 and R8 is independently a straight or branched, cyclic or crosslinked cyclic alkylene group, or an arylene group having the number of carbon atoms of 6-20. The patterning method comprises: coating the positive type photoresist material onto a substrate; heating the resulted substrate; carrying out light exposure of the substrate through a photomask, with high energy beam or electronic beam having a wavelength of 300nm or less; optionally heating the resulted substrate; and developing the patterns.