METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FOR REDUCING THICKNESS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor device is provided to thin the semiconductor device without deteriorating productivity while maintaining a characteristic of an integrated circuit formed on a surface of the semiconductor device. CONSTITUTION: A back surface of a semiconductor substrate(10) having an integrated circuit formed on a front surface thereof is mechanically polished. The back surface of the semiconductor substrate is etched by using a chemical reaction. In the mechanical polishing process, the semiconductor substrate is ground so as to have a thickness sufficient to prevent a defect caused on the back surface thereof from reaching a front surface thereof. In the etching process, the semiconductor substrate is ground so as to be thinner by an amount corresponding to a concave/convex difference on the back surface after the mechanical polishing.