发明名称 Program counting circuit and program word line voltage generating circuit in flash memory device using the same
摘要 The present invention relates to a program counting circuit and a program word line voltage generating circuit in a flash memory device. The program counting circuit includes a data transmit unit having a plurality of fuses for receiving and transferring data, a counting reset unit for generating a reset signal in order to set the data transferred from the data transmit unit to an initial counting value, and a counting unit for setting the data to the initial counting value depending on the reset signal and sequentially performing a counting operation from the initial counting value set depending on the clock signal. Thus, the circuit can be simply implemented, and the number pf the program and verify operation can be controlled.
申请公布号 US6845060(B2) 申请公布日期 2005.01.18
申请号 US20020310871 申请日期 2002.12.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE SANG YONG
分类号 G11C16/06;G05F1/56;G11C8/08;G11C16/02;G11C16/12;(IPC1-7):G11C8/00 主分类号 G11C16/06
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