| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which breakdown at the electrode part of a semiconductor chip due to thermal stress can be suppressed. <P>SOLUTION: In the semiconductor device where the surface and rear of a semiconductor chip are connected electrically with a pair of conductor members, the electrode part of the semiconductor chip has a following structure. A plurality of recesses 19a are provided in the surface of an Al electrode 19 formed on a semiconductor substrate 15 and the Al electrode 19 is bonded to an Ni plating layer 20 with the Ni plating layer 20 entering into the recess 19a. Since the joint of an electrode part 21 has an interdigital cross-section, a rigid joint is ensured through strong anchoring effect and breakdown at the electrode part 21 due to thermal stress can be suppressed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
