METHOD FOR FORMING FIELD OXIDE LAYER OF SEMICONDUCTOR DEVICE TO EMBODY HIGH INTEGRATION OF SEMICONDUCTOR DEVICE WHILE IMPROVING YIELD AND RELIABILITY OF SEMICONDUCTOR DEVICE,申请号KR19970081088-传众专利搜索

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发明名称	METHOD FOR FORMING FIELD OXIDE LAYER OF SEMICONDUCTOR DEVICE TO EMBODY HIGH INTEGRATION OF SEMICONDUCTOR DEVICE WHILE IMPROVING YIELD AND RELIABILITY OF SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100470943(B1)	申请公布日期	2005.01.31
申请号	KR19970081088	申请日期	1997.12.31
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KIM, U JIN
分类号	H01L21/76;(IPC1-7):H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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