| 摘要 |
PURPOSE: A fabricating method of a gate electrode of a semiconductor device is provided to secure a sufficient process margin in a gate forming process and prevent damage of a gate oxide layer in a post-etch process. CONSTITUTION: A gate oxide layer(21) is formed on a substrate(20). A polysilicon layer(22), a metal silicide layer(23), and a hard mask layer(24) are formed on the gate oxide layer. The metal silicide layer is etched by using an NF3 gas and the patterned hard mask. A gate electrode is formed by etching the polysilicon layer. In the process for etching the metal silicide layer, gases of N2, O2, Ar, and Cl2 are used as auxiliary gases. The metal silicide layer includes one of tungsten, titanium, cobalt, nickel, and chrome.
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