METHOD OF FABRICATING T-SHAPED TRANSISTOR GATE TO FORM L1 AND L2 AS COMPONENTS OF T-SHAPED TRANSISTOR

摘要

PURPOSE: A method of fabricating a T-shaped transistor gate is provided to form L1 and L2 as components of a T-shaped transistor by performing a patterning process only once. CONSTITUTION: A gate oxide layer(102) is deposited on a semiconductor substrate. A polysilicon layer(104) is deposited on the gate oxide layer. A tungsten layer(106) is formed by depositing a second gate material. A patterning process is performed by using a gate mask. The tungsten layer is etched by using a photoresist. The photoresist is removed therefrom. The polysilicon layer is etched by using the tungsten layer as a mask.