METHOD OF MANUFACTURING SIMULTANEOUSLY VIA HOLE AND TRENCH FOR INDUCTOR OF SEMICONDUCTOR DEVICE FOR SIMPLIFYING MANUFACTURING PROCESSES

摘要

PURPOSE: A method is provided to simplify manufacturing processes by forming simultaneously a via hole and a trench on a photoresist layer using one time photo process. CONSTITUTION: A metal seed layer(112) and a photoresist layer(114) are formed on a semiconductor substrate(110). The photoresist layer is exposed to light by using a mask pattern(100) and sequentially developed. At this time, a via hole is formed on the photoresist layer due to a light transmitting substrate(102) of the mask pattern, a trench with a shallower depth than that of the via hole is formed on the photoresist layer due to a phase shift pattern(104) of the mask pattern and the other portion of the photoresist layer is left due to a light shielding pattern(106) of the mask pattern.