METHOD OF IMPROVING INVERSE NARROW WIDTH EFFECT(INWE) USING ENHANCED STI STRUCTURE FOR PREVENTING CONVERGENCE OF ELECTRIC FIELD

摘要

PURPOSE: A method of improving INWE(Inverse Narrow Width Effect) is provided to prevent electric field from being converged on a corner of an STI(Shallow Trench Isolation) structure by forming roundly the corner of the STI structure. CONSTITUTION: A first silicon oxide layer and a silicon nitride layer are sequentially formed on a silicon substrate(100). A plurality of trenches are formed in the substrate by using an STI photomask. The photomask is removed therefrom and a silicon ion-implantation is performed thereon. A heat treatment is performed on the resultant structure to form roundly corners of each trench. A second silicon oxide layer(106) is filled in the trench and planarized.