ION-IMPLANTATION METHOD FOR REDUCING RESISTANCE OF LDD REGION AND IMPROVING PERFORMANCE OF MOSFET USING SALICIDE

摘要

PURPOSE: An ion-implantation method is provided to improve the performance of an MOSFET(Metal Oxide Semiconductor Field Effect Transistor) by saliciding an LDD(Lightly Doped Drain) region using Ni silicide instead of Co salicide. CONSTITUTION: A gate structure composed of a gate oxide layer and a polysilicon layer is formed on a silicon substrate(100). An oxide layer is thinly deposited along the upper surface of the resultant structure. The oxide layer is left at both sidewalls alone of the gate structure by using dry-etching. An Ni silicide layer(112) is formed at both sides of the gate structure on the substrate. An LDD spacer(110) is formed at both sidewalls of the gate structure. A source and drain junction are formed in the substrate by using an ion-implantation. An additional Ni silicide layer is formed on the Ni silicide layer.