FET WITH FIN PATTERN FOR IMPROVING THE MOBILITY OF CHARGES AND FORMING METHOD THEREOF

摘要

PURPOSE: A fin FET(Field Effect Transistor) and a forming method thereof are provided to improve performance of the FET by using a fin pattern with enhanced structure. CONSTITUTION: A fin FET includes a fin pattern, a gate electrode, a gate insulating layer, and a pair of impurity diffused layers. The fin pattern(118) is formed on a support substrate(105). The fin pattern includes a plurality of first semiconductor patterns(110a) and second semiconductor patterns(112a) alternately stacked with each other. The gate electrode(122) crosses over an upper portion of the fin pattern via the gate insulating layer(120). The pair of impurity diffused layers are formed at both sides of the gate electrode in the fin pattern. The first semiconductor pattern is made of a strained silicon pattern and the second semiconductor pattern is made of a SiGe pattern.