| 摘要 |
A device for reducing the effects of leakage current within electronic devices is disclosed. In one form, a high voltage driver includes a high voltage source coupled to at least one high voltage transistor and a leakage offset module coupled to at least a portion of one of the high voltage transistors. The leakage offset module includes a diode connected MOS device operable to generate an offset voltage and an MOS shunting device coupled in a parallel with the diode connected MOS device. During operation, the diode connected MOS device generates an offset voltage based on a sub-threshold leakage associated with using the high voltage source and the MOS shorting device is operable to short the diode connected MOS device when sub-threshold leakage current is relatively low.
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