| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To operate a ROM circuit by low voltage. <P>SOLUTION: In the rear stage of a sense amplifier 23, a normal path 121, an inverse path 122 having an inverter 111, and a selection cell 123 for switching the normal path 121 and the inverse path 122 by column selection signals s0 to s3 are arranged. Thus, the data of a memory cell on the bit line of columns C0 and C2 in which data are written according to a parameter file are directly outputted from the sense amplifier 23 through the normal path. The data of a memory cell on the bit line of columns C1 and C3 in which data are inverted and written are inverted and outputted from the sense amplifier 23 through the inverse path 122 having the inverter 111. This invention can be applied to a circuit designing device for designing a ROM circuit. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
