| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of treating multiple kinds of wafers having different sizes at a simple low cost by the same plasma treatment apparatus. SOLUTION: In the plasma treatment apparatus performing an etching treatment at a back side of a circuit formation surface of the wafers, insulating films 26, 27 made of annular ceramics are located on an installation surface 3b of an electrode 3a corresponding to peripheral positions of a large size wafer 6A and a small size wafer 6B. When the wafer 6A is aimed, a ring member 29 is equipped. When the wafer 6B is aimed, there is located a locking member 9 which covers between insulating films 26, 27 on the installation surface 3b and locks an absorption hole 3e, and furthermore, there is equipped a covering member 25 which covers an upper part of the locking member 9. Thereby, the wafers having different sizes can be plasma treated by the same electrode 3a. COPYRIGHT: (C)2005,JPO&NCIPI |
