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发明名称
形成金属镶嵌结构的方法
摘要
本发明提供一种形成金属镶嵌结构的方法,其包括以下步骤。首先,在一基板上形成一介电层。接着,蚀刻介电层而形成一镶嵌开口。接着,进行电浆处理以除去在介电层上之残余杂质。接着,将金属填入镶嵌开口内。藉由在镶嵌开口蚀刻之后所进行的电浆处理,可避免由于残余杂质所造成的介电层剥离现象。
申请公布号
TW200511428
申请公布日期
2005.03.16
申请号
TW093106634
申请日期
2004.03.12
申请人
台湾积体电路制造股份有限公司
发明人
王明璁;苏迪希;杨佳明;蔡庆铭
分类号
H01L21/3065
主分类号
H01L21/3065
代理机构
代理人
洪澄文;颜锦顺
主权项
地址
新竹市新竹科学工业园区力行六路8号
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